Search results for " growth of defects"

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How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile

2021

Recent reports indicated that the use of an InAlN underlayer (UL) can significantly improve the efficiency of InGaN/GaN quantum well (QW) LEDs. Currently, this result is explained by considering that the UL reduces the density of nonradiative recombination centers in the QWs. However, an experimental proof of the reduction of defects in the QWs is not straightforward. In this paper, we use combined electrical (I-V), optical (L-I), capacitance (C-V), steady-state photocapacitance (SSPC) and light-assisted capacitance-voltage (LCV) measurements to explain why devices with UL have a much higher efficiency than identical LEDs without UL. Specifically, we demonstrated an improvement in both elec…

Materials scienceLEDsbusiness.industryunderlayergrowth of defectsSSPC measurementsLimitingdefects concentration; growth of defects; LEDs; SSPC measurements; underlayerSettore ING-INF/01 - Elettronicadefects concentrationCapacitancelaw.inventionTrap (computing)Experimental prooflawdefects concentration growth of defects LEDs SSPC measurements underlayerOptoelectronicsbusinessQuantum wellRecombinationLight-emitting diodeGallium Nitride Materials and Devices XVI
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